PART |
Description |
Maker |
M5M51016BRT-10L-I M5M51016BRT-10LL-I M5M51016BRT-7 |
1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM 1048576位(65536字由16位)的CMOS静态RAM From old datasheet system 1048576-1048576-BIT CMOS STATICRAM 1048576-BIT(65536-WORD BY 16-BIT) CMOS STATIC RAM
|
Mitsubishi Electric, Corp. MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
|
CXK5T8512TM/TN-10LLX CXK5T8512TM/TN-12LLX CXK5T851 |
64K X 8 STANDARD SRAM, 120 ns, PDSO32 65536-word x 8-bit High Speed CMOS Static RAM 65536-word x 8-bit High Speed CMOS Static RAM
|
SONY
|
TC551664AJ |
65536 Word x 16-Bit CMOS Static RAM
|
Toshiba Semiconductor
|
M5M51R16AWG-10L D99015 M5M51R16AWG-15L M5M51R16AWG |
From old datasheet system 1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
|
TC531024F-15 TC531024P-12 |
1M BIT (65536 WORD X 16 BIT) CMOS MASK ROM
|
Electronic Theatre Controls, Inc.
|
CXK5V8512TM-10LLX CXK5V8512TM-85LLX |
65536-word x 8-bit High Speed CMOS Static RAM
|
SONY
|
CXK5B18120TM- CXK5B18120TM-12 CXK5B18120TM |
128 x 64 pixel format, LED Backlight available -65536-word x 18-bit High Speed Bi-CMOS Static RAM
|
SONY[Sony Corporation]
|
M6MGT331S8AKT M6MGB331S8AKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
|
Renesas Electronics Corporation
|
MSM3764A |
65536-WORD X 1-BIT DYNAMIC RAM
|
OKI SEMICONDUCTOR CO., LTD. OKI electronic componets
|
HN27512P-25 |
EPROM, 65536-Word, 8-Bit One Time Electrically Programmable Read Only Memory
|
Renesas Technology / Hitachi Semiconductor
|
TC55W800FT-70 |
512K Word x 16 Bit/1M Word x 8 Bit Full CMOS Static RAM(512K x 16 1M x 8 CMOS 静态RAM) 12k字16 Bit/1M字8位全部的CMOS静态RAM(为512k字16 100万字× 8位的CMOS静态RAM)的
|
Toshiba Corporation Toshiba, Corp.
|
UPD27C1024A |
65536 x 16-Bit CMOS UV EPROM
|
NEC Electronics
|